Abstract
Solution type metal‐oxide semiconductor was processed on mass‐production ready equipment and integrated in a backplane with ESL architecture TFTs. Excellent thickness uniformity of the semiconductor layer was obtained over the complete Gen1 glass substrate (320 mm x 352 mm), resulting in homogeneous TFT performance and bias stress reliability. An 85‐ppi QVGA AMOLED display is demonstrated.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have