Abstract
InGaAsP/InP distributed feedback laser diodes (DFB LDs) and distributed Bragg reflector laser diodes (DBR LDs) have been extensively developed as a single-longitudinal-mode (SLM) light source for long-haul high-bit-rate optical fiber communication systems. Control of a coupling constant κL in these laser diodes is very important. κL determines the characteristics of laser diodes, such as threshold current, slope efficiency, and sidemode suppression ratio. But it is very difficult to control κL by a conventional method, namely. holographic photolithography and chemical etching, because the height of the corrugation which determines κL is several hundred angstroms and varies easily with exposure and etching conditions. Here we demonstrate a novel method for accurate control of κL by a metallo-organic chemical vapor deposition (MO CVD) technique1 and a new structure.
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