Abstract

Room-temperature continuous wave lasing in quantum dots covered with GalnNAs on GaAs substrate was attained at 1.31 μm with threshold current density of 0.4 kA/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> by metal-organic chemical vapor deposition. The range of continuous wave lasing was extended to 1.33 μm with using a thin p-clad layer.

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.