Abstract
We report an efficient room temperature photon source at 1320 nm telecommunication wavelength from nanostructured silicon surface. The activation of this light source was realized by treating the surface of Si wafer by vapor of heavy water (D2O) containing a mixture of hydrofluoric and nitric acids. Treatment without deuterium generates an intense light emission band at the band-edge of Si, while the deuterium treatment alone creates a strong emission band at 1320 nm in the near infrared. It was found that the deuterium is actively involved in the formation of a nanostructured Si surface as evidenced from relative strength of the Si-O vibrational modes and presence of N-D bondings. The origin of this photon source was discussed in terms of oxygen related defect states and dislocations. The Si surface treated by Deuterium containing mixture exhibits a strong rectifying electrical activity as it is demonstrated by Schottky diodes fabricated on these wafers. Being compatible with mature silicon circuitry, the source may find applications in photonics and optoelectronics.
Highlights
Silicon based optoelectronic devices and components are needed for monolithic integration of optical and electronic information processing units and interconnects
DEUTERIUM TREATMENT To produce a light emitting surface, silicon wafer is treated by deuterium oxide D2O containing mixture of HF:HNO3:D2O, which produces acid vapor, where the concentration ratio of HF in the solution can be around 40%–50% and concentration of HNO3 solution should be 60%–70%
In summary, we have shown that with deuterium treatment Si wafer can be turned into a very effective light source generating at the near infrared telecommunication wavelength
Summary
Silicon based optoelectronic devices and components are needed for monolithic integration of optical and electronic information processing units and interconnects. The process of surface treatment on Si consists of exposing wafers to heavy water D2O containing HF : HNO3 acid vapor, which results in the formation of ammonium silicon hexafluoride (ND4)2SiF6 on silicon surface [27] This way of treating wafer surface leads to a light emitting structure with characteristic single and high quantum efficiency emission peak at 1320 nm. This work differs from previous studies with a single emission band at room temperature (RT) in the mid-infrared region as well as with its production method using a heavy water It is a new method of sensitizing Si wafer in order to induce NIR light emission using relatively simple and low cost technology. An aluminum electrod of 100 nm was sputtered on the back side of the wafer
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