1300 nm Semiconductor Optical Amplifier Compatible With an InP Monolithic Active/Passive Integration Technology

Joel Hazan,Stefanos Andreou,Dzmitry Pustakhod,Kevin A Williams,Steven Kleijn,Erwin A J M Bente

doi:10.1109/jphot.2022.3175373

Joel Hazan, Stefanos Andreou + Show 4 more

Open Access

https://doi.org/10.1109/jphot.2022.3175373

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Abstract

In monolithic photonic integrated circuits (PICs), an optimized active/passive integration is needed to provide efficient coupling and low amount of interface reflections between amplifiers and passive components. A 1300 nm semiconductor optical amplifier (SOA) on InP substrate and optimized for butt-joint reflections is investigated. Material performance were assessed from measurements of broad area lasers. Room temperature operation reveals 1.2 W single facet output power with threshold current around 100 A/cm 2 per well. Characteristic temperatures of T 0 = 75 K and T 1 = 294 K were obtained. A compact model description of the SOA, suitable for the design of PICs and rate equation analysis, was applied to parametrize the unsaturated gain measurements. Current injection efficiency of 0.65, transparency carrier density of 0.57 10 18 cm −3 , and free carrier absorption losses up to 15 cm −1 were extracted from fitting the data. The model is verified with measurements of optical gain saturation. A modal gain of 15 dB for a 600 μm long narrow ridge SOA leads to output saturation power higher than 30 mW at 7 kA/cm 2 . This building block contributes to the development of an InP monolithic integration technology in the 1300 nm range, which can enable the use of photonic integrated circuits in many kind of applications.

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