Abstract
The authors report an MBE-grown GaInNAs MQW ridge-waveguide (RWG) emitting at 1.29 µm with performance data that for the first time rival those of InGaAsP lasers. Among these data are threshold currents of 21 mA, slope efficiencies of 0.25 W/A per facet and values of up to 110 K for the characteristic temperature T0. These important improvements in material quality should pave the way towards monolithically-grown 1.30 µm GaInNAs VCSELs in the near future.
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