Abstract
We show a scheme for achieving high-speed operation for carrier-injection based silicon electro-optical modulator, which is optimized for small size and high modulation depth. The performance of the device is analyzed theoretically and a 12.5-Gbit/s modulation with high extinction ratio >9dB is demonstrated experimentally using a silicon micro-ring modulator.
Highlights
A silicon electro-optical modulator is a critical component for enabling optical interconnection systems on a microelectronic chip [1, 2]
The effect of the pre-emphasized driving signal on the dynamics of the modulator can be seen in Fig. 2(e) and Fig 2(f), where we show the charge dynamics and the optical transmission when V1 = 6V and V1′ = 2V
A NRZ signal from a pattern generator was amplified by a 12-Gbit/s inverting amplifier and sent to an impulse generator network (IGN), which acts as a differentiator, and output an impulse at each transition of the input NRZ signal
Summary
A silicon electro-optical modulator is a critical component for enabling optical interconnection systems on a microelectronic chip [1, 2]. Received October 2006; revised December 2006; accepted 10 January 2007 22 January 2007 / Vol 15, No 2 / OPTICS EXPRESS 430 region (in the case of the depletion-based p-i-n diode [6, 7]), while its speed is limited since it relies on the slower diffusion of minority carriers, as opposed to the faster motion of majority carriers. We show both theoretically and experimentally, a driving scheme for greatly enhancing the operation speed of the carrier-injection based p-i-n modulator. Using this method and the micro-ring resonator structure, we achieve simultaneously high-speed operation above 10 Gbit/s, small device size, low power consumption and high modulation depth
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