Abstract
With 18 μs bulk lifetime and surface recombination velocity ∼ 84 cm/sec, we demonstrate an improved understanding of surface passivation properties and loss mechanisms in free-standing 30 µm ultra-thin silicon devices. It is demonstrated that even low quality silicon substrates can be used for fabrication of thin silicon solar cells without strict requirements of high bulk minority carrier lifetimes as required in thick solar cells. The use of a-Si/c-Si structure on very thin wafers allows low surface recombination velocities, low temperature processing and reduced structural and electronic interface defects, thus making them ideal for very thin, wafer-based solar cells.
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