Abstract

This report is the first to present the newly developed 1200 V reverse conducting IGBT (RC-IGBT) manufactured by using our thin wafer process technology. The fabricated RC-IGBT operates as both IGBT and free wheeling diode (FWD). Adopting a helium-irradiation carrier lifetime controlling technology to our RC-IGBT, the essential characteristics of the fabricated 1200 V/100 A chip can achieve a level comparable to those of conventional 3rd generation PT-type IGBT and FWD pair. The trade off with Vce(sat) and turn-off loss and the correlation between Vf and Err is almost the same as the conventional 3rd generation PT-type IGBT and FWD pair.

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