Abstract
This paper presents a novel 1200V RB-IGBT for the AC Matrix Converter. The 1200V RB-IGBT is made by deep diffusion isolation process and thin wafer process technology. Our fabricated RB-IGBT achieved more than 1200V reverse blocking capability and the same forward voltage drop Vce(sat) and turn-off energy loss Eoff characteristic as our Punch Through type (PT-type) previous third generation IGBT. Therefore it is possible to reduce total loss in the AC Matrix Converter operation compared with the conventional IGBT and Diode coupling.
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