1200-V GaN-on-Si Quasi-Vertical p-n Diodes

Abstract

This work reports 1200-V quasi-vertical GaN-on-Si p-n diodes with a 6.6- <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula> -thick high-quality GaN drift layer showing excellent static and dynamic performance. The as-fabricated GaN-on-Si p-n diode gives a high current on/off ratio of ~1010, a low ideality factor of 1.2, a low specific on-resistance (Ron,sp) of 1.3 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\text{m}\Omega \cdot $ </tex-math></inline-formula> cm2, and a high breakdown voltage (BV) of 1210 V. The p-n diode can properly operate at a high temperature of 175 °C, and the device performance can be effectively recovered after the power cycling test. A reduced dynamic on-resistance (Ron) dependence on the off-state voltage (VOFF) and on-state conduction time (TON) is observed in this p-n diode and attributed to the filling dynamics of electron traps. A normalized dynamic Ron of 0.7 is realized after switching from a VOFF stress at 1000 V. As the first 1200-V GaN-on-Si vertical power device, this cost-effective p-n diode with high performance holds a great promise for high-voltage power applications.