Abstract
A insulated-gate thyristor (IGTH) design for achieving high controllable current capability is described. A square-cellular design with high density of MOS-channels modulating the resistance of the base region of the NPN transistor of the thyristor structure is-used. The IGTH was fabricated using a double-diffused DMOS process and 1200 V devices with controllable currents in excess of 150 A were obtained.
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