Abstract
Elemental source molecular beam epitaxy has been used to grow vertical cavity laser diodes on GaAs substrates that employ GaInNAs multiquantum well active regions and AlAs/GaAs distributed Bragg reflectors. The laser diodes emitted light at 1200 nm and had threshold current densities of 2.5 kA/cm2 and efficiencies of 0.066 W/A under room temperature pulsed operation.
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