Abstract
This paper presents a UV P–I–N Graphene/AlGaN/GaN/AlGaN P–I–N photodetector high electron mobility transistor implemented and simulated with a light module using ATLAS SILVACO TCAD tools. The PIN-Pd structure contains a GaN intrinsic layer between the p-AlGaN, p-GaN, and n-GaN, n-AlGaN layers to control the two-dimensional gas 2DEG reasonably. Graphene has been employed as a transparent layer for thin film devices, particularly for high-temperature processing. The proposed photodetector exhibits a high responsivity of 115 A/W at Lamda = 300 nm, a photocurrent of 1.4 × 10−7 A, and an appropriate (IIlumination/IDark) rejection of 3.6. The photo and dark current are 3.6 V, 1.8 mA, and 0.5 mA, respectively. Additionally, the device offers a bandwidth of 120 GHz and has transient times of 2 μs. These results are consistent with the latest research on this type of photodetector.
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