Abstract
AbstractThe amorphous silicon (a‐Si)over 300 × 350 mm2 could be completely crystallized by using silicide mediated crystallization (SMC)of a‐Si by means of UV scan heating. A‐Si having a 2.0 × 1013 atoms/cm2 Ni area density was crystallized in 10 minutes without having amorphous phase inside and the grain size was ∼20 μm. The field effect mobilities and threshold voltages of the p‐channel poly‐Si TFTs were 35 ∼ 40 cm2/Vs and 0.6 ∼ 0.7 V/dec, respectively, over 300 × 350 mm2.
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