有機金屬氣相磊晶法在矽(111)基材上成長氮化鎵之特性分析

Abstract

GaN and AlN films were grow on (111) Si substrate by admittances of trimethylgallium(TMGa) and ammonia (NH3) at 1000℃. A high temperature (HT) or low temperature (LT) grown AlN thin layer was employed as the buffer layer between HT GaN film and Si substrate. Experimental results show that LT AlN and HT GaN films grown on the Si substrate exhibit better crystalline quality than those deposited on the HT AlN Si substrate. The growth and characteristics of AlN buffer layer and the GaN layers were investigated by X-ray diffraction (XRD), Photoluminescence (PL), Atomic force microscopy (AFM) at room temperature.