Abstract
Results concerning MBE (111) CdTe growth on vicinal (001) GaAs surfaces with misorientation angles extending from 0° to 7° around the [110] or [1 1 0] axis are presented. The interface formation and the epilayer film are studied using X-ray photoemission and Auger electron spectroscopy, ion channeling, X-ray diffraction and high resolution transmission electron microscopy techniques. It will be shown that using tilted substrates allows a continuous layered epitaxial growth and the formation of twin free (111) CdTe films. In such layers, mismatch strain are relaxed through a double network of dislocations with extra half-planes within the CdTe film either (111) or (11 1 ).
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