Abstract
The relaxed (110) surface electronic structure of GaAs is calculated within the tight-binding model. The symmetry and dispersion of the surface states are compared to those measured by angle-resolved photoemission experiments. Variations in photoemission intensity with measurement geometry are related to matrix-element modulation effects and it is shown that angle-resolved measurements can give information on the symmetry of surface states.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
