Abstract
The plane source evaporator has been developed for the 100x100mm glass substrate for the first time. The shadow distance formed by an angle of incidence and the FMM thickness has been measured and the doped depth profile of green and blue EML layers have been observed in the plane source evaporation. The submicron scale shadow distances were as 0.2~0.76um and the doping profiles appears quite uniform. Therefore, it is promising for very high ppi OLED and high brightness OLED to develop by the plane source evaporation techniques.
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