11.2: The Effect of Doping Distribution on the Property of Green Phosphorescent Organic Light‐Emitting Diodes

Abstract

In mass production OLED structures, doping ratio distribution across the thickness of emitting layer is not uniform owing to the linear evaporating configuration, where dopant and host materials are added in different sources. In this study, we firstly confirmed that different types of doping distribution among emitting layer of green phosphorescent OLED exhibited over 15% difference of current efficiency. By carefully designing and comparing emitting layers with a series of doping distribution modes, we found that dramatic variation of doping ratio near electron blocking layer was the critical factor. Then, trapping behavior of dopant molecules was confirmed to affect the carrier distribution among the emitting layer according to analysis of current density‐voltage (JV) and capacitance‐voltage (CV) curves from carrier only devices based on two types of doping distribution modes. Combining with the result of hole‐electron recombination zone (RZ), the area where possessed both high doping ratio and excitons recombination probability exhibited a high current efficiency and low driving voltage. Finally, PL and EL transient decay lifetime combined with triplet‐polaron quenching (TPQ) efficiency measurement demonstrated that TPQ was the main factor causing current efficiency difference between two types of doping distribution modes. Therefore, the doping distribution and trapping property of dopant material in emission layer should be carefully evaluated for OLED devices for mass production.