Abstract
Advanced display technology has various potential applications with a huge potential market. Recently, mini‐LEDs and micro‐LEDs are attracting great attentions for advanced display applications because of the high dynamic range, high ambient contrast ratio, thin profile, and low power consumption [1]. Due to higher indium composition in the active layers, green LEDs' wavelength is more sensitive to temperature variation. Higher indium content InGaN layers also make green LEDs seriously suffer from quantum confined stark effect (QCSE). So it is much more difficult to get good wavelength uniformity and high efficiency for green LEDs. In this work, several factors including local temperature tuning, stress control during epitaxy growth, substrate pattern size and substrate orientation have been studied to improve green mini‐LED's wavelength uniformity and optical intensity.
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