Abstract
In this paper, a reconfigurable stacked CMOS power amplifier using matched microstrip slant line for Ku-band application is proposed. This work is mainly focused on a matching component which is microstrip line and it is slanted at 45°. This component is applied in stacked power amplifiers which provide a higher output power and enhanced power added efficiency (PAE), improved impedance matching and wide impedance bandwidth. Two, three and four stacked power amplifiers with matched microstrip slant lines are designed, analyzed and compared. First demonstration uses a single microstrip slant line that covers a frequency range of operation from 7 to 15.9 GHz with impedance bandwidth of 8.9 GHz. This impedance bandwidth can be enhanced using proposed two or more stacks of microstrip slant lines and exhibits greater than 20 GHz impedance bandwidth with reconfigure band of operation. Two, three and four stacked power amplifiers are designed and simulated in the advanced design system using 45 nm predictive technology model process. As per the results of PAs, effective four stacked power amplifier design achieves maximum PAE of 57 % while a saturated output power of 20 dBm. The forward gain of 17.5 dB is obtained within frequency range of 11---17 GHz.
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