Abstract
A new type of deposition process, enhancement of electron beam excited plasma for ion beam sputtering deposition of diamond-like carbon (DLC) film, was proposed in order to deposit hydrogen-free, sp^3 bonding rich DLC film. With enhancement of electron beam excited plasma, DLC film was deposited at higher growth rates by ion beam sputtering deposition. Furthermore, electron beam excited plasma influenced characteristics of DLC film. To examine the influence of enhancement of electron beam excited plasma, we deposited DLC films with electron beam excited plasma, before deposition, after deposition, or during deposition. As a result, the lowest friction DLC film was deposited with the enhancement during deposition of DLC.
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