Abstract
An infrared sensor technology that has made quick progress in recent years is the photodiode based on Type-II InAs/(In)GaSb strained layer superlattices (SLS). We have developed Focal Plane Arrays (FPAs) with up to a million pixels, quantum efficiency exceeding 50%, and cutoff wavelength ~ 10 microns. SLS offers the promise of the high quantum efficiency and operating temperature of longwave infrared mercury cadmium telluride (MCT) at the price point of midwave infrared indium antimonide (InSb). That promise is rapidly being fulfilled. This paper presents the current state-of-the-art of this sensor technology at this critical stage of its evolution.
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