Abstract
An enhancement-mode implant-free In 0.4 Ga 0.6 As metal oxide semiconductor field effect transistors (MOSFETs) on GaAs substrate is demonstrated. The device features atomic layer deposition (ALD) 8 nm A1 2 0 3 gate oxide layer on 5 nm InGaP interfacial layer and is fabricated on GaAs substrate. Devices with 100 nm gate-length exhibit a threshold voltage of 0.72 V, an extrinsic transconductance of 170 mS/mm, and a saturation drain current of 250 mA/mm. The current gain cutoff frequency, f T , and the maximum frequency of oscillation, f max , of 79 GHz and 180 GHz were obtained, respectively. This work suggests that InGaAs MOSFETs with InGaP interfacial layer on GaAs can be used in single power supply RF applications.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
