Abstract
Rapid vapor-phase doping (RVD) provides very shallow and abrupt boron profiles. A cutoff-frequency of 100 GHz was achieved with a Si BJT having a base formed by RVD. Self-aligned metal/IDP (SMI) technology can reduce base resistance and collector capacitance. Combining RVD with SMI technology, a maximum oscillation frequency of 74 GHz and a 13.6-ps delay time in an ECL ring oscillator were achieved. The results showed homojunction transistors are valid for future high-speed and high-frequency applications.
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