Abstract
This paper reports the design and performance of a GaN MMIC power amplifier operating at G-band. Electron-beam lithography has been used to produce a 50 nm T-shaped gate on the AlGaN/GaN HEMT structure with high f <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</inf> /f <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">MAX</inf> . The reported G-band power amplifier produces an output power greater than 20.5 dBm when input power is 13 dBm and a small signal gain greater than 15 dB ranging from 160 GHz to 176 GHz. Moreover, it achieves a peak output power of 0.16 W (22.1 dBm) at 175 GHz in continuous-wave mode, with an associated power density of 1 W/mm. This is the highest output power density at this frequency range from our known.
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