100‐MHz CMOS circuits directly fabricated on plastic using sequential laterally solidified silicon

Abstract

Abstract— CMOS TFT circuits were fabricated on plastic using sequential laterally solidified silicon combined with a low‐temperature CMOS process. The unity‐gain frequencies of the best of NMOS TFTs are greater than 250 MHz, and the CMOS ring oscillators operate at 100 MHz. To the best of the authors' knowledge, these are the highest‐frequency circuits ever fabricated directly on plastic. This high‐performance CMOS‐on‐plastic process can be applied to the fabrication of AMLCD integrated drivers and AMOLED pixels on plastic substrates.