Abstract
100 kV electron beam exposures of tungsten x-ray masks have been made using ghost proximity correction. 0.15 μm lithography is possible on masks having a 0.3 μm thick tungsten absorber. 0.25 μm features are resolved on masks with a 0.6 μm tungsten film thickness. The linewidth control (±5%) and dose latitude (2.5 nm edge shift per 1% dose change) are as good or better than those obtained by dose modulation, and contrast is sufficiently high to permit dry etch pattern transfer into the tungsten absorber. The process latitude makes 100 kV ghost exposures suitable for patterning 1 Gbit dynamic random access memories on 1m x-ray masks.
Published Version
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