100 GHz mixer vertically integrated (stacked) SIS junction array

Abstract

A Vertically Integrated Array (stacked array) of single windowSIS junctions (VIA SIS), based on a stacked five layer structure of Nb-AlOx-Nb-AlOx-Nb, has been fabricated and tested in a quasi optical mixer configuration at 106 GHz. This particular VIA SIS design has two stacked junctions fabricated by standard tri-layer process employing photolithography, reactive ion and wet etching processes. A simple expression for calculating the specific capacitance of single and arrayed SIS junctions is suggested. Due to the absence of interconnection leads between the individual junctions and reduced overall capacitance, compared to a single SIS junction, has the VIA SIS good future prospects for use in submillimeter wave SIS mixers The VIA SIS may be regarded as a lumped rather than a distributed structure at least up to the gap frequency at 730 GHz for Nb. DC-IV measurements show high quality of the Individual SIS junctions and good reproducibility of the array parameters over the substrate area. The first VIA SIS mixer experiments yielded a receiver noise temperature of 95 K (DSB) at a LO frequency of 106 GHz.