100 Gbit/s PAM-4 Linear Burst-Mode Transimpedance Amplifier for Upstream Flexible Passive Optical Networks

Abstract

Next-generation passive optical networks (PONs) with upstream rates of 50 Gbit/s and beyond will require a new class of burst-mode transimpedance amplifiers (BMTIAs) that are linear to enable (digital) equalization of channel impairments. Such linear BMTIAs also enable higher-order modulation formats like 4-level pulse amplitude modulation (PAM-4). In this paper, we demonstrate operation of a novel linear BMTIA integrated together with a commercial off-the-shelf 25G-class avalanche photodiode (APD), achieving 50 Gbit/s non-return-to-zero (NRZ) operation with a sensitivity of -23.7 dBm optical modulation amplitude (OMA) and dynamic range exceeding 21.7 dB and 100 Gbit/s PAM-4 operation with a sensitivity of -15.8 dBm OMA and dynamic range exceeding 15.4 dB, both at a bit error ratio (BER) of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex-math notation="LaTeX">$10^{-2}$</tex-math></inline-formula> . In addition, fast burst-mode gain-control and balancing circuits limit loud-soft sensitivity penalties in the case of AC-coupled circuits to less than 1.3 dB. The chip was designed in a 0.13 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex-math notation="LaTeX">$\mu$</tex-math></inline-formula> m SiGe:C BiCMOS technology, has an area of 1.2×1.7 mm <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex-math notation="LaTeX">$^{2}$</tex-math></inline-formula> and consumes between 260 mW and 310 mW. This receiver paves the way to a next-generation class of BMTIAs, supporting the ITU-T G.9804.3 Amd 1 standard.