Abstract
We study the decay of an optically excited cloud of carriers as a function of its initial diameter d. Values as low as d = 100 nm are possible via metallic apertures on bulk GaAs fabricated by electron beam lithography. We find that the decay time τ versus d scales as τ ∝ d2 for large d, as expected for diffusive transport, and as τ ∝ d for submicron values of d, indicating strong deviations from diffusive transport. The dependence on parameters such as initial carrier kinetic energy, carrier density and sample temperature is discussed.
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