Abstract

AbstractA high‐performance InAlN/GaN heterojunction field effect transistor with a nominal gate length of 0.25 μm was fabricated on a sapphire substrate. Low defect density and low sheet resistance were obtained for the heterostructure under tests. The fabricated device exhibited a negligible current collapse, and remarkable RF characteristics, i.e. a maximum output power density of 4.69 W/mm at 10 GHz, a linear gain of 11.8 dB, and a peak power‐added efficiency of 48%, suggesting the extraordinary performances reachable by InAlN based technology. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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