Year-end Sale % OFF 
Abstract
The successful realisation of MQW DFB-SIBH lasers for 10Gbit/s systems applications is reported. The SIBH laser structure is completely based on an LPMOVPE growth process, including selective LPMOVPE of semi-insulating current blocking layers. Threshold currents as low as 7 mA and total chip capacitances of 2.6 pF are measured resulting in 6dBel (dBel = electrical dB) corner frequencies in excess of 11 GHz and rise/fall times of 36/44 ps, respectively. A significant reduction of the linewidth broadening compared to bulk lasers is observed which is attributed to a reduced α factor due to quantum wells. A chirp at – 20 dB of 0.47 nm under 10Gbit/s modulation is obtained.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
