Abstract
An asymmetric waveguide avalanche photodiode (APD) has been developed. Asymmetric waveguide structures are effective for achieving robustness under high input power operations, and high quantum efficiencies of 94% for 1.55 mum and 90% for 1.31 mum were achieved. A gain-bandwidth product of 110 GHz and a maximum 3 dB-down bandwidth of 20 GHz were also achieved. A high receiver sensitivity of -30.2 dBm at 10 Gbit/s for a receiver module with integrated TIA has also been demonstrated
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