10-Gb/s Ge/SiGe Multiple Quantum-Well Waveguide Photodetector

Abstract

The authors report on high speed operation of a Ge/SiGe multiple quantum-well waveguide photodetector. At -3 V, 10 Gb/s operation is demonstrated at wavelengths of 1405 and 1420 nm with a responsivity as high as 0.8 A/W. The device, 3 μm wide and 80 μm long, exhibits a dark current of 474 nA at a reverse bias of -1 V. These results pave the way for the use of Ge/SiGe multiple quantum-well structures as efficient active waveguide devices in silicon compatible integrated circuits.