Abstract
Deep level transient spectroscopy (DLTS) measurements were performed to study electron emission from quantum states in a 20-layer Ge quantum-dot superlattice (QDSL) in a Ge/Si p-n heterostructure. It was established that the changes in the DLTS spectra depend heavily on the magnitude of the applied reverse bias U r . Three regions of the reverse bias U r were identified, corresponding to the manifestation of the three modes of the Wannier-Stark effect: Wannier-Stark ladder mode, Wannier-Stark localization, and nonresonant Zener tunneling mode. Furthermore, it was found that the appearance of DLTS peaks for all three modes is associated with electron emission from deep-level defects via Wannier-Stark localized states arising as a result of the splitting of the electron miniband of the Ge/Si QDSL.
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