10.1007/s11453-008-3002-9

Abstract

A quantitative model for near-surface redistribution of doping impurity in silicon in the course of proton-stimulated diffusion is developed for the first time. According to the model, the near-surface peak of the impurity concentration is caused by migration of neutral impurity—self-interstitial pairs to the surface with subsequent decomposition of these pairs and accumulation of the impurity at the silicon surface within a thin layer (referred to as δ-doped layer). The depletion and enhancement regions that are found deeper than the near-surface concentration peak are caused by expulsion of ionized impurity by an electric field from the near-surface region of the field penetration. The field appears due to the charge formed in the natural-oxide film at the silicon surface as a result of irradiation with protons. The diffusion-kinetic equations for the impurity, self-interstitials, vacancies, and impurity—self-interstitial pairs were solved numerically simultaneously with the Poisson equation. It is shown that the results of calculations are in quantitative agreement with experimental data on the proton-stimulated diffusion of boron impurity in the near-surface region of silicon.