Abstract
Diffusion of Cr into epitaxial GaAs in an open system in the temperature range of 750–850°C was studied. Temperature dependences of the diffusion coefficient and solubility of Cr in GaAs were determined. Temperature dependences of the diffusion coefficient and solubility of Cr are described by the Arrhenius equation with the parameters D 0 = 1.9 × 109 cm2/s and E = 4.1 ± 0.2 eV for the diffusion coefficient and N 0 = 2.3 × 1024 cm−3 and E 0 = 1.9 ± 0.4 eV for solubility. The effect of protective SiO2 filmon the Cr diffusion coefficient and morphology of the GaAs surface after diffusion was studied.
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