Abstract
Coarse-grained crystals of AgGaSe2 and AgInSe2 ternary compounds and their alloys are grown by planar crystallization of the melts. For the crystals produced in this way, the transmittance spectra near the fundamental absorption edge are studied. From the experimental spectra, the band gap (E g) and its variation with composition are determined. It is established that E g is a nonlinear function of the composition parameter x. The dependence E g (x) is calculated theoretically in the context of the Van Vechten-Bergstresser model and Hill-Richardson pseudopotential model.
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