Abstract

Designing a high-linearity, high-efficiency RF power amplifier with wide bandwidth design is a real challenge. This article explores a technique to achieve 30 dBm output power with an adjacent channel power ratio (ACPR) of more than -65 dBc for frequency range of 800-900 MHz. A three-stage gallium arsenide heterojunction bipolar transistor (GaAs HBT) RF power amplifier with Cartesian feedback in closed-loop form is the main architecture of the design. An adaptive bias technique was used in the RF power amplifier design to achieve high linearity while preserving good efficiency.

Full Text
Paper version not known

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call