Abstract
1 W continuous wave (CW) reliable operation (/spl sim/1000 h) in large transverse spot-size (d/T=0.55 /spl mu/m), compressively strained, InGaAsP (/spl lambda/=0.73 /spl mu/m)-active region diode lasers is demonstrated. The use of tensile-strained InGaP barrier layers provides strain-compensation and results in a weak temperature sensitivity for the threshold current (T/sub 0/=125 K) and external differential quantum efficiency (T/sub 1/=410 K).
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