Abstract
Pb ( Zr 0.35 Ti 0.65 ) O 3 films measuring 33 nm thick, were prepared on (111)SrRuO3/(111)Pt/TiO2/SiO2/(100)Si substrates at 540 °C using pulsed metal organic chemical vapor deposition. (111)-oriented films consisting of columnar grains possessed local epitaxial relationships with the underling (111)-oriented SrRuO3 layer. Their polarization (electric field characteristics), which had better symmetry than those on (111)Ir//TiO2/SiO2/(100)Si substrates, were saturated below 1 V with a large remanent polarization, but were not noticeably degraded upon decreasing film thickness. These results demonstrate that film thickness can be scaled down for low voltage operations using lattice matched interface between a Pb(Zr0.35Ti0.65)O3 film and SrRuO3 bottom electrode.
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