Abstract
The heterostructure SiGe/Si has contributed to a large extent to an understanding of lattice mismatched heterostructures and this understanding has led to rapidly increasing exploitation of SiGe in modern microelectronics. In this chapter crystallographic data of silicon–germanium alloys such as crystal structure and lattice parameters and the phase diagram are reviewed. The basic concepts of equilibrium strain and strain relaxation by misfit dislocations are described in the section on critical thickness. The lattice mismatch either causes strain or results in generation of misfit dislocations at the interface. X-ray diffraction is unrivalled as a tool to analyze heteroepitaxial layers.
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