Abstract
The first demonstration of implant-free, flatband-mode In 0.75 Ga 0.25 As channel n-MOSFETs is reported. These 1 mum gate length MOSFETs, fabricated on a structure with average mobility of 7720 cm /Vs and sheet carrier concentration of 3.3 times 10 cm -2 , utilise a Pt gate, a high-k dielectric (k sime 20), and a delta-doped InAlAs/InGaAs/InAlAs heterostructure. The devices have a typical maximum drive current (I d,sat ) of 933 muA/mum, extrinsic transconductance (g m ) of 737 muS/mum, gate leakage (I g ) of 40 pA, and on-resistance (R on ) of 555 Omega .mum. The g m and R on figures of merit are the best reported to date for any III-V MOSFET.
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