1 MeV electron irradiation induced degradation of boron-doped strained Si 1− xGe x layers

Abstract

First results are presented of a study of electrically active lattice defects introduced in boron-doped Si 1− x Ge x strained layers by 1 MeV electron irradiation performed at room temperature. For this study n +−p + diodes with three different germanium contents fabricated on conventional p-type Czochralski silicon substrates are used. The detrimental influence of the irradiation is studied by measuring leakage currents and C- V characteristics before and after irradiation. The signature of the created deep levels is determined by deep level transient spectroscopy analyses. The presence of deep levels and the diode performance is studied as a function of the germanium content and electron fluence. The observed defect levels are compared with those reported in electron-irradiated p-type silicon.