Abstract
1 Gbit SOI DRAM with a body-contacted (BC) SOI MOSFET structure is successfully realized for the first time. The fabricated 1G SOI DRAM has fully compatible process with 0.17 /spl mu/m bulk CMOS technology except for the isolation process. The key advantage of BC-SOI MOSFET is freedom from the floating-body effect, since the body-potential increase can be suppressed by the well contact through the remaining thin-silicon film beneath the field oxide. The BC-SOI structure has several advantages, such as relatively high isolation punchthrough voltage, high drain-to-source breakdown voltage compared with conventional thin-film SOI MOSFETs and small junction capacitance compared with bulk MOSFETs, resulting in high-speed circuit operation.
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