Abstract
The effects of magnetic induction on 1/ f-noise in n-GaAs are investigated both at room temperature and at liquid-nitrogen temperature. A numerical calculation for such effects in n-GaAs is given, based on optical-phonon scattering. By comparing the experimental data with the theoretical predictions for mobility fluctuations and for number fluctuations, we conclude that 1/ f-noise in n-GaAs epitaxial layers is caused by mobility fluctuations.
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