1/f noise in semiconductors arising from the heterogeneous detrapping process of individual charge carriers

Abstract

Abstract We propose a model of 1 / f noise in semiconductors based on the drift of individual charge carriers and their interaction with the trapping centers. We assume that the trapping centers are homogeneously distributed in the material. The trapping centers are assumed to be heterogeneous and have unique detrapping rates. We show that uniform detrapping rate distribution emerges as a natural consequence of the vacant trap depths following the Boltzmann distribution, and the detrapping process obeying Arrhenius law. When these laws apply, and if the trapping rate is low in comparison to the maximum detrapping rate, 1 / f noise in the form of Hooge’s relation is recovered. Hooge’s parameter, α H, is shown to be a ratio between the characteristic trapping rate and the maximum detrapping rate. The proposed model implies that 1 / f noise arises from the temporal charge carrier number fluctuations, not from the spatial mobility fluctuations.