1 ∕ f noise in linearized low resistance MgO magnetic tunnel junctions

Abstract

Low RA MgO magnetic tunnel junctions prepared at Singulus (Ta3∕CuN30∕Ta5∕PtMn20∕CoFe2.5∕Ru0.7∕CoFeB3∕MgO1.2∕CoFeB3∕Ta5 (thickness in nanometers) were microfabricated at INESC-MN. The junctions were patterned into micron-sized sensors (5–20μm2) with controlled shape anisotropy (aspect ratio ranging from 2 to 20). A small external longitudinal bias field (15–30 Oe) was further used to improve sensor linearity. The MgO junctions have a resistance-area product of 150Ωμm2 and a maximum tunnel magnetoresistance of 130%. Noise measurements were done in linearized sensors, from dc to 500 kHz. The magnetic and nonmagnetic contributions to the 1∕f noise were determined. From the data fitting, Hooge parameters of ∼2.20×10−9μm2 were obtained for the nonmagnetic 1∕f noise. Analysis of direct experimental data revealed the possibility to detect variations of magnetic fields in the order of 10−10T∕Hz0.5 with these MgO junctions, demonstrating their potential for ultralow-field detection.